Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2019)
Tavares, Belarmino Gomes Mendes; Teodoro, M. D.; Castro, E. D. Guarin; LaPierre, R. R.; Pusep, Yuri A 
Source: Poster contributions. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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TAVARES, Belarmino Gomes Mendes et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 17 nov. 2024.APA
Tavares, B. G. M., Teodoro, M. D., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committeesNLM
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 nov. 17 ] Available from: http://www.ldsd2019.org/committeesVancouver
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 nov. 17 ] Available from: http://www.ldsd2019.org/committees
