Annealing effects on crystallized Al-doped a-Ge: H thin films (2005)
Fajardo, F.; Zanatta, Antonio Ricardo 
; Chambouleyron, I.
Source: Physica Status Solidi C. Conference titles: Latin American Symposium on Solid State Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, ALUMÍNIO
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ABNT
FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 04 nov. 2024. , 2005APA
Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH.NLM
Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 nov. 04 ]Vancouver
Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 nov. 04 ]
