Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers (1990)
Bernussi, A. A.; Brum, J. A.; Motisuke, P.; Basmaji, Pierre; Siu Li, Máximo 
; Hipólito, Oscar
Source: Abstracts. Conference titles: International Conference on Physic of Electro-optic microstructures and microdevices. Unidade: IFQSC
Assunto: FÍSICA
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ABNT
BERNUSSI, A. A. et al. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. 1990, Anais.. Crete: , Universidade de São Paulo, 1990. . Acesso em: 11 nov. 2024.APA
Bernussi, A. A., Brum, J. A., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. In Abstracts. Crete: , Universidade de São Paulo.NLM
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. Abstracts. 1990 ;[citado 2024 nov. 11 ]Vancouver
Bernussi AA, Brum JA, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Continuous to bound interband transitions in 'DELTA' - doped 'GA''AS' layers. Abstracts. 1990 ;[citado 2024 nov. 11 ]
