Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 12 jul. 2024.APA
Zanelatto, G., Pusep, Y. A., Lubyshev, D. I., Galzerani, J. C., & Basmaji, P. (1997). Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2024 jul. 12 ]Vancouver
Zanelatto G, Pusep YA, Lubyshev DI, Galzerani JC, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of 'GA''AS' / 'AL''AS' heterostructures. Program and Abstracts. 1997 ;[citado 2024 jul. 12 ]
