I-V characteristics of Schottky contacts based on quantum wires (2006)
Fonte: Microelectronics Journal. Unidade: EESC
Assuntos: EMISSÃO TERMOIÔNICA, SEMICONDUTORES
ABNT
RAGI, Regiane e ROMERO, Murilo Araújo. I-V characteristics of Schottky contacts based on quantum wires. Microelectronics Journal, v. No 2006, n. 11, p. 1261-1264, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2006.06.006. Acesso em: 01 nov. 2024.APA
Ragi, R., & Romero, M. A. (2006). I-V characteristics of Schottky contacts based on quantum wires. Microelectronics Journal, No 2006( 11), 1261-1264. doi:10.1016/j.mejo.2006.06.006NLM
Ragi R, Romero MA. I-V characteristics of Schottky contacts based on quantum wires [Internet]. Microelectronics Journal. 2006 ; No 2006( 11): 1261-1264.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.mejo.2006.06.006Vancouver
Ragi R, Romero MA. I-V characteristics of Schottky contacts based on quantum wires [Internet]. Microelectronics Journal. 2006 ; No 2006( 11): 1261-1264.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.mejo.2006.06.006