Transient effects in accumulation mode p-channel soi - mosfets operating at 77k (1994)
Martino, João Antonio 
; Rotondaro, Antônio Luís Pacheco; Simoen, Eddy ; Magnusson, Ulf; Claeys, Cor
Source: Ieee Transactions on Electron Devices. Unidade: EP
Assunto: SEMICONDUTORES
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MARTINO, João Antonio et al. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices, v. 41, n. 4 , p. 519-23, 1994Tradução . . Acesso em: 06 jul. 2024.APA
Martino, J. A., Rotondaro, A. L. P., Simoen, E., Magnusson, U., & Claeys, C. (1994). Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices, 41( 4 ), 519-23.NLM
Martino JA, Rotondaro ALP, Simoen E, Magnusson U, Claeys C. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices. 1994 ;41( 4 ): 519-23.[citado 2024 jul. 06 ]Vancouver
Martino JA, Rotondaro ALP, Simoen E, Magnusson U, Claeys C. Transient effects in accumulation mode p-channel soi - mosfets operating at 77k. Ieee Transactions on Electron Devices. 1994 ;41( 4 ): 519-23.[citado 2024 jul. 06 ]
