Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
PAVANELLO, Marcelo Antonio et al. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 06 jul. 2024.APA
Pavanello, M. A., Martino, J. A., Simoen, E., Mercha, A., Claeys, C., & De Meyer, K. (2003). A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 jul. 06 ]Vancouver
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 jul. 06 ]