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Filtros : "IFSC222" "Indexado no ISI - Institute for Scientific Information" Removido: "FO" Limpar

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  • Artigo de periodico-carta/editorial

    Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] (2005)

    Silva Junior, E. F. da; Henini, M; Scolfaro, Luisa Maria Ribeiro; Sipahi, Guilherme Matos

    Source: Microelectronics Journal. Unidades: IF, IFSC

    Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, NANOTECNOLOGIA, ESTRUTURA DOS MATERIAIS

    Acesso à fonteHow to cite
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    • ABNT

      SILVA JUNIOR, E. F. da et al. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 14 jun. 2024. , 2005

    • APA

      Silva Junior, E. F. da, Henini, M., Scolfaro, L. M. R., & Sipahi, G. M. (2005). Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial]. Microelectronics Journal. Oxford: Instituto de Física, Universidade de São Paulo. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1

    • NLM

      Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 jun. 14 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1

    • Vancouver

      Silva Junior EF da, Henini M, Scolfaro LMR, Sipahi GM. Workshop of Semiconductor Nanodevices and Nanostructured Materials, 4 - NanoSemiMat. [Editorial] [Internet]. Microelectronics Journal. 2005 ; No 2005( 11): 939.[citado 2024 jun. 14 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1

  • Artigo de periodico

    Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures (2002)

    Rodrigues, S. C. P.; Sipahi, Guilherme Matos; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.

    Source: Journal of Physics-Condensed Matter. Unidades: IFSC, IF

    Assunto: SEMICONDUTORES

    Acesso à fonteDOIHow to cite
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    • ABNT

      RODRIGUES, S. C. P. et al. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, v. 14, n. 23, p. 5813-5827, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/23/312. Acesso em: 14 jun. 2024.

    • APA

      Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, 14( 23), 5813-5827. doi:10.1088/0953-8984/14/23/312

    • NLM

      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 jun. 14 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312

    • Vancouver

      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 jun. 14 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312
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