Menu

Filtros : "IFSC031" "Physica Status Solidi C" Removidos: "MEDICINA PREVENTIVA" "Dagli, Maria Lúcia Zaidan" Limpar

Filtros

Refine with date range

  • 1

1 - 2 (2 records)

  • Artigo de periodico

    Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films (2013)

    Guerra, J. Andres; Benz, Felix; Zanatta, Antonio Ricardo; Strunk, Horst P.; Winnacker, Albrecht; Weingärtner, Roland

    Source: Physica Status Solidi C. Unidade: IFSC

    Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      GUERRA, J. Andres et al. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films. Physica Status Solidi C, v. 10, n. Ja 2013, p. 68-71, 2013Tradução . . Disponível em: https://doi.org/10.1002/pssc.201200394. Acesso em: 24 jun. 2024.

    • APA

      Guerra, J. A., Benz, F., Zanatta, A. R., Strunk, H. P., Winnacker, A., & Weingärtner, R. (2013). Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films. Physica Status Solidi C, 10( Ja 2013), 68-71. doi:10.1002/pssc.201200394

    • NLM

      Guerra JA, Benz F, Zanatta AR, Strunk HP, Winnacker A, Weingärtner R. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films [Internet]. Physica Status Solidi C. 2013 ; 10( Ja 2013): 68-71.[citado 2024 jun. 24 ] Available from: https://doi.org/10.1002/pssc.201200394

    • Vancouver

      Guerra JA, Benz F, Zanatta AR, Strunk HP, Winnacker A, Weingärtner R. Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films [Internet]. Physica Status Solidi C. 2013 ; 10( Ja 2013): 68-71.[citado 2024 jun. 24 ] Available from: https://doi.org/10.1002/pssc.201200394

  • Trabalho de evento-anais periodico

    Annealing effects on crystallized Al-doped a-Ge: H thin films (2005)

    Fajardo, F.; Zanatta, Antonio Ricardo; Chambouleyron, I.

    Source: Physica Status Solidi C. Conference titles: Latin American Symposium on Solid State Physics. Unidade: IFSC

    Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, ALUMÍNIO

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 24 jun. 2024. , 2005

    • APA

      Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH.

    • NLM

      Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 jun. 24 ]

    • Vancouver

      Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 jun. 24 ]
  • 1

1 - 2 (2 records)

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2024