Fonte: Proceedings. Nome do evento: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: FZEA
Assuntos: FÍSICA ÓPTICA, EPITAXIA POR FEIXE MOLECULAR, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
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PITON, Marcelo Rizzo et al. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. 2017, Anais.. Piscataway, NJ: IEEE, 2017. Disponível em: https://doi.org/10.1109/SBMicro.2017.8113028. Acesso em: 02 nov. 2024.APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., Souto, S. P. A., Galeti, H. V. A., et al. (2017). Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. In Proceedings. Piscataway, NJ: IEEE. doi:10.1109/SBMicro.2017.8113028NLM
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 02 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028Vancouver
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 02 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028
