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Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 11 jul. 2024.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.4816288
Artigo de periodico
A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential (2010)
Pusep, Yuri A; Mohseni, P. K.; LaPierre, R. R.; Bakarov, A. K.; Toropov, A. I.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)
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ABNT
PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 11 jul. 2024.
APA
Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
NLM
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3364138
Vancouver
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3364138
Artigo de periodico
Active waveguide effects from porous anodic alumina: an optical sensor proposition (2010)
Strixino, F. Trivinho; Guerreiro, H. A.; Gomes, C. S.; Pereira, E. C.; Guimarães, Francisco Eduardo Gontijo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SENSORES ÓPTICOS, NANOTECNOLOGIA, LUMINESCÊNCIA, POLARIZAÇÃO
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ABNT
STRIXINO, F. Trivinho et al. Active waveguide effects from porous anodic alumina: an optical sensor proposition. Applied Physics Letters, v. 97, n. 1, p. 11902-1-11902-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3447375. Acesso em: 11 jul. 2024.
APA
Strixino, F. T., Guerreiro, H. A., Gomes, C. S., Pereira, E. C., & Guimarães, F. E. G. (2010). Active waveguide effects from porous anodic alumina: an optical sensor proposition. Applied Physics Letters, 97( 1), 11902-1-11902-3. doi:10.1063/1.3447375
NLM
Strixino FT, Guerreiro HA, Gomes CS, Pereira EC, Guimarães FEG. Active waveguide effects from porous anodic alumina: an optical sensor proposition [Internet]. Applied Physics Letters. 2010 ; 97( 1): 11902-1-11902-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3447375
Vancouver
Strixino FT, Guerreiro HA, Gomes CS, Pereira EC, Guimarães FEG. Active waveguide effects from porous anodic alumina: an optical sensor proposition [Internet]. Applied Physics Letters. 2010 ; 97( 1): 11902-1-11902-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3447375
Artigo de periodico
Interface roughness in short-period InGaAs/InP superlattices (2008)
Pusep, Yuri A.; Gozzo, G. C.; La Pierre, R. R.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO
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ABNT
PUSEP, Yuri A. e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 11 jul. 2024.
APA
Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531
NLM
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3050531
Vancouver
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.3050531
Artigo de periodico
Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells (2008)
Li, Jun; Chang, Kai; Hai, Guo Qiang; Chan, K. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÁTOMOS (ESTRUTURA), SEMICONDUTORES, MECÂNICA QUÂNTICA, SPIN, HIBRIDIZAÇÃO
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ABNT
LI, Jun et al. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, v. 92, n. 15, p. 152107-1-152107-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2909544. Acesso em: 11 jul. 2024.
APA
Li, J., Chang, K., Hai, G. Q., & Chan, K. S. (2008). Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, 92( 15), 152107-1-152107-3. doi:10.1063/1.2909544
NLM
Li J, Chang K, Hai GQ, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.2909544
Vancouver
Li J, Chang K, Hai GQ, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.2909544
Artigo de periodico
Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings (2007)
Hanke, Michael; Mazur, Yu I.; Marega Júnior, Euclydes; AbuWaar, Z. Y.; Salamo, G. J.; Schäfer, P.; Schmidbauer, M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA, MODELOS (TRANSFORMAÇÃO), DIFRAÇÃO POR RAIOS X, MAGNETISMO
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ABNT
HANKE, Michael et al. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, v. 91, p. 043103-1-043103-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2760191. Acesso em: 11 jul. 2024.
APA
Hanke, M., Mazur, Y. I., Marega Júnior, E., AbuWaar, Z. Y., Salamo, G. J., Schäfer, P., & Schmidbauer, M. (2007). Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, 91, 043103-1-043103-3. doi:10.1063/1.2760191
NLM
Hanke M, Mazur YI, Marega Júnior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.2760191
Vancouver
Hanke M, Mazur YI, Marega Júnior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.2760191
Artigo de periodico-carta/editorial
Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)] (2006)
Hai, Guo-Qiang; Oliveira, S. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA, SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
HAI, Guo-Qiang e OLIVEIRA, S. S. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 11 jul. 2024. , 2006
APA
Hai, G. -Q., & Oliveira, S. S. (2006). Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2024 jul. 11 ]
Vancouver
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2024 jul. 11 ]
Artigo de periodico
Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films (2005)
Marletta, Alexandre; Miwa, R. H.; Cazati, T.; Guimarães, Francisco Eduardo Gontijo; Faria, Roberto Mendonça; Alves, Marcos Veríssimo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS)
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ABNT
MARLETTA, Alexandre et al. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, v. 86, n. 14, p. 141907-1-141907-2, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1897847. Acesso em: 11 jul. 2024.
APA
Marletta, A., Miwa, R. H., Cazati, T., Guimarães, F. E. G., Faria, R. M., & Alves, M. V. (2005). Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, 86( 14), 141907-1-141907-2. doi:10.1063/1.1897847
NLM
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.1897847
Vancouver
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2024 jul. 11 ] Available from: https://doi.org/10.1063/1.1897847

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