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Artigo de periodico
Nanotribology of hydrogenated amorphous silicon: sliding- dependent friction and implications for nanoelectromechanical systems (2022)
Leidens, Leonardo Mathias ; Michels, Alexandre Fassini ; Perotti, Bruna Louise; Alvarez, Fernando ; Zanatta, Antonio Ricardo ; Figueroa, Carlos Alejandro
Fonte: ACS Applied Nano Materials. Unidade: IFSC
Assuntos: SILICONE, FILMES FINOS, NANOPARTÍCULAS
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ABNT
LEIDENS, Leonardo Mathias et al. Nanotribology of hydrogenated amorphous silicon: sliding- dependent friction and implications for nanoelectromechanical systems. ACS Applied Nano Materials, v. 5, n. 10, p. 15546-15556 + supporting information: S1-S7, 2022Tradução . . Disponível em: https://doi.org/10.1021/acsanm.2c03603. Acesso em: 12 jul. 2024.
APA
Leidens, L. M., Michels, A. F., Perotti, B. L., Alvarez, F., Zanatta, A. R., & Figueroa, C. A. (2022). Nanotribology of hydrogenated amorphous silicon: sliding- dependent friction and implications for nanoelectromechanical systems. ACS Applied Nano Materials, 5( 10), 15546-15556 + supporting information: S1-S7. doi:10.1021/acsanm.2c03603
NLM
Leidens LM, Michels AF, Perotti BL, Alvarez F, Zanatta AR, Figueroa CA. Nanotribology of hydrogenated amorphous silicon: sliding- dependent friction and implications for nanoelectromechanical systems [Internet]. ACS Applied Nano Materials. 2022 ; 5( 10): 15546-15556 + supporting information: S1-S7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1021/acsanm.2c03603
Vancouver
Leidens LM, Michels AF, Perotti BL, Alvarez F, Zanatta AR, Figueroa CA. Nanotribology of hydrogenated amorphous silicon: sliding- dependent friction and implications for nanoelectromechanical systems [Internet]. ACS Applied Nano Materials. 2022 ; 5( 10): 15546-15556 + supporting information: S1-S7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1021/acsanm.2c03603
Artigo de periodico
Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Antonio Ricardo
Fonte: Applied Physics Letters. Unidades: EESC, IFSC
Assuntos: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILICONE
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Antonio Ricardo. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, v. 89, n. 3, p. 031917-1-031917-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2227644. Acesso em: 12 jul. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, A. R. (2006). Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, 89( 3), 031917-1-031917-3. doi:10.1063/1.2227644
NLM
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.2227644
Vancouver
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.2227644
Artigo de periodico
Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Ricardo Antonio
Fonte: Defect and Diffusion Forum. Unidades: EESC, IFSC
Assuntos: SILICONE, ESPECTROSCOPIA RAMAN, MUDANÇA DE FASE
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Ricardo Antonio. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, v. 258-260, p. 276-281, 2006Tradução . . Acesso em: 12 jul. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, R. A. (2006). Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, 258-260, 276-281.
NLM
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 jul. 12 ]
Vancouver
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 jul. 12 ]
Trabalho de evento-anais periodico
Spectroscopic investigation of Nd-doped amorphous SiN films (2006)
Ribeiro, Cristina Tereza Monteiro; Zanatta, Antonio Ricardo
Fonte: Journal of Non-Crystalline Solids. Nome do evento: International Conference on Amorphous and Nanocrystalline Semicondutors - Science and Technology - ICANS. Unidade: IFSC
Assuntos: FILMES FINOS, SEMICONDUTORES, ESPECTROSCOPIA ÓPTICA, SILICONE
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ABNT
RIBEIRO, Cristina Tereza Monteiro e ZANATTA, Antonio Ricardo. Spectroscopic investigation of Nd-doped amorphous SiN films. Journal of Non-Crystalline Solids. Amsterdam: Elsevier Science BV. . Acesso em: 12 jul. 2024. , 2006
APA
Ribeiro, C. T. M., & Zanatta, A. R. (2006). Spectroscopic investigation of Nd-doped amorphous SiN films. Journal of Non-Crystalline Solids. Amsterdam: Elsevier Science BV.
NLM
Ribeiro CTM, Zanatta AR. Spectroscopic investigation of Nd-doped amorphous SiN films. Journal of Non-Crystalline Solids. 2006 ; 352( Ju 2006): 1286-1289.[citado 2024 jul. 12 ]
Vancouver
Ribeiro CTM, Zanatta AR. Spectroscopic investigation of Nd-doped amorphous SiN films. Journal of Non-Crystalline Solids. 2006 ; 352( Ju 2006): 1286-1289.[citado 2024 jul. 12 ]
Artigo de periodico
Optoelectronic and structural characteristics of Er-doped amorphous AIN films (2005)
Zanatta, Antonio Ricardo; Ribeiro, Cristina Teresa M.; Jahn, U.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, SEMICONDUTORES, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, SILICONE, FILMES FINOS
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, Cristina Teresa M. e JAHN, U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, v. No 2005, n. 9, p. 093514-1-093514-8, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2127120. Acesso em: 12 jul. 2024.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2005). Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, No 2005( 9), 093514-1-093514-8. doi:10.1063/1.2127120
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.2127120
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.2127120

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