Source: Festschrift in Honor of R C Leite. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
CAMATA, R P et al. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. Festschrift in Honor of R C Leite. Tradução . Singapura: World Scientific, 1991. . . Acesso em: 19 nov. 2024.APA
Camata, R. P., Scolfaro, L. M. R., Martins, J. M. de V., Leite, J. R., Mendonca, C. A. C., Meneses, E. A., et al. (1991). Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In Festschrift in Honor of R C Leite. Singapura: World Scientific.NLM
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 nov. 19 ]Vancouver
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 nov. 19 ]