High mobilities limited by interface roughness in InGaAs/InP heterostructures (2009)
Source: Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics - BWSP. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, NANOTECNOLOGIA, FÍSICA DE PARTÍCULAS
ABNT
PUSEP, Yuri A. et al. High mobilities limited by interface roughness in InGaAs/InP heterostructures. 2009, Anais.. Curitiba: Universidade Federal do Paraná, 2009. . Acesso em: 16 jun. 2024.APA
Pusep, Y. A., Gozzo, G. C., La Pierre, R. R., & Gold, A. (2009). High mobilities limited by interface roughness in InGaAs/InP heterostructures. In Abstracts. Curitiba: Universidade Federal do Paraná.NLM
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;[citado 2024 jun. 16 ]Vancouver
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;[citado 2024 jun. 16 ]