ReP USP - Resultado da busca

Artigo de periodico
Mobility degradation influence on the SOI MOSFET channel length extraction at 77K (1996)
Nicolett, Aparecido Sirley; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 04 nov. 2024.
APA
Nicolett, A. S., Simoen, E., Claeys, C., & Martino, J. A. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]
Vancouver
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]
Artigo de periodico
Finite element simulations of unbalanced faults in a synchronous machine (1996)
Nabeta, Silvio Ikuyo ; Foggia, Albert; Coulomb, Jean-Louis; Reyne, Gilbert
Source: IEEE Transactions on Magnetics. Unidade: EP
Assunto: MÁQUINAS SÍNCRONAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NABETA, Silvio Ikuyo et al. Finite element simulations of unbalanced faults in a synchronous machine. IEEE Transactions on Magnetics, v. 32, n. 3, p. 1561-1564, 1996Tradução . . Disponível em: https://doi.org/10.1109/20.497549. Acesso em: 04 nov. 2024.
APA
Nabeta, S. I., Foggia, A., Coulomb, J. -L., & Reyne, G. (1996). Finite element simulations of unbalanced faults in a synchronous machine. IEEE Transactions on Magnetics, 32( 3), 1561-1564. doi:10.1109/20.497549
NLM
Nabeta SI, Foggia A, Coulomb J-L, Reyne G. Finite element simulations of unbalanced faults in a synchronous machine [Internet]. IEEE Transactions on Magnetics. 1996 ; 32( 3): 1561-1564.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1109/20.497549
Vancouver
Nabeta SI, Foggia A, Coulomb J-L, Reyne G. Finite element simulations of unbalanced faults in a synchronous machine [Internet]. IEEE Transactions on Magnetics. 1996 ; 32( 3): 1561-1564.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1109/20.497549
Artigo de periodico
Parameter extraction of MOSFETs operated at low temperature (1996)
Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy e CLAEYS, Cor e MARTINO, João Antonio. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 04 nov. 2024.
APA
Simoen, E., Claeys, C., & Martino, J. A. (1996). Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]
Vancouver
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]
Artigo de periodico
Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures (1996)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 04 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1996). Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 nov. 04 ]

USP Schools

ReP

Filtros

Authors

Indexado em