Fonte: Book of Abstracts. Nome do evento: Encontro Nacional de Física da Matéria Condensada. Unidade: FFCLRP
Assunto: FÍSICA DA MATÉRIA CONDENSADA
ABNT
MELLO, H. et al. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. 2014, Anais.. São Paulo: SBF, 2014. . Acesso em: 17 nov. 2024.APA
Mello, H., Heimfarth, T., Lima, F., Bachmann, L., & Mulato, M. (2014). Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. In Book of Abstracts. São Paulo: SBF.NLM
Mello H, Heimfarth T, Lima F, Bachmann L, Mulato M. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. Book of Abstracts. 2014 ;[citado 2024 nov. 17 ]Vancouver
Mello H, Heimfarth T, Lima F, Bachmann L, Mulato M. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. Book of Abstracts. 2014 ;[citado 2024 nov. 17 ]