Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET (2014)
- Authors:
- USP affiliated authors: BACHMANN, LUCIANO - FFCLRP ; MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
MELLO, H. et al. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. 2014, Anais.. São Paulo: SBF, 2014. . Acesso em: 19 abr. 2024. -
APA
Mello, H., Heimfarth, T., Lima, F., Bachmann, L., & Mulato, M. (2014). Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. In Book of Abstracts. São Paulo: SBF. -
NLM
Mello H, Heimfarth T, Lima F, Bachmann L, Mulato M. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. Book of Abstracts. 2014 ;[citado 2024 abr. 19 ] -
Vancouver
Mello H, Heimfarth T, Lima F, Bachmann L, Mulato M. Polyaniline electrodeposited on top of fluorine-doped tin oxide film as chemically-sensitive layer of extended gate field effect transistor: instrumental amplifier vs. single EGFET. Book of Abstracts. 2014 ;[citado 2024 abr. 19 ] - Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method
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