I-V and C-V characteristics of high-k dielectrics based MOS devices (2003)
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada 26. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
SOUSA, J S de et al. I-V and C-V characteristics of high-k dielectrics based MOS devices. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 10 out. 2024.APA
Sousa, J. S. de, Barros, E. B., Freire, V. N., Silva Júnior, E. F. da, Leite, J. R., & Scolfaro, L. M. R. (2003). I-V and C-V characteristics of high-k dielectrics based MOS devices. In Resumos. São Paulo: SBF.NLM
Sousa JS de, Barros EB, Freire VN, Silva Júnior EF da, Leite JR, Scolfaro LMR. I-V and C-V characteristics of high-k dielectrics based MOS devices. Resumos. 2003 ;[citado 2024 out. 10 ]Vancouver
Sousa JS de, Barros EB, Freire VN, Silva Júnior EF da, Leite JR, Scolfaro LMR. I-V and C-V characteristics of high-k dielectrics based MOS devices. Resumos. 2003 ;[citado 2024 out. 10 ]