Role of nitrogen partial pressure, deposition rate and annealing on stability of beta-W phase (2023)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF ; PENACCHIO, RAFAELA FELIX DA SILVA - IF
- Unidade: IF
- DOI: 10.1007/s00339-023-06552-x
- Subjects: FILMES FINOS; TUNGSTÊNIO; DIFRAÇÃO POR RAIOS X
- Keywords: Thin films; Reactive sputtering; Tungsten; β-W; Annealing
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied Physics A: Materials Science and Processing (Applied Physics A)
- ISSN: 1432-0630
- Volume/Número/Paginação/Ano: v. 129, n. 5, 03 de abril de 2023, número do artigo: 312
- Status:
- Artigo possui versão em acesso aberto em repositório (Green Open Access)
- Versão do Documento:
- Versão submetida (Pré-print)
- Acessar versão aberta:
-
ABNT
SINGH, Hardepinder et al. Role of nitrogen partial pressure, deposition rate and annealing on stability of beta-W phase. Applied Physics A: Materials Science and Processing (Applied Physics A), v. 129, n. 5, 2023Tradução . . Disponível em: https://doi.org/10.1007/s00339-023-06552-x. Acesso em: 10 abr. 2026. -
APA
Singh, H., Gupta, M., Gupta, P., Penacchio, R., Morelhão, S. L., & Kumar, H. (2023). Role of nitrogen partial pressure, deposition rate and annealing on stability of beta-W phase. Applied Physics A: Materials Science and Processing (Applied Physics A), 129( 5). doi:10.1007/s00339-023-06552-x -
NLM
Singh H, Gupta M, Gupta P, Penacchio R, Morelhão SL, Kumar H. Role of nitrogen partial pressure, deposition rate and annealing on stability of beta-W phase [Internet]. Applied Physics A: Materials Science and Processing (Applied Physics A). 2023 ; 129( 5):[citado 2026 abr. 10 ] Available from: https://doi.org/10.1007/s00339-023-06552-x -
Vancouver
Singh H, Gupta M, Gupta P, Penacchio R, Morelhão SL, Kumar H. Role of nitrogen partial pressure, deposition rate and annealing on stability of beta-W phase [Internet]. Applied Physics A: Materials Science and Processing (Applied Physics A). 2023 ; 129( 5):[citado 2026 abr. 10 ] Available from: https://doi.org/10.1007/s00339-023-06552-x - Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator
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