DFT-½ method on 2D materials: an approximate quasiparticle correction for the calculation of fundamental energy gap (2019)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física - SBF
- Publisher place: São Paulo
- Date published: 2019
- Source:
- Título: Abstracts
- Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF
-
ABNT
GUILHON, I et al. DFT-½ method on 2D materials: an approximate quasiparticle correction for the calculation of fundamental energy gap. 2019, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2019. . Acesso em: 12 mar. 2026. -
APA
Guilhon, I., Koda, D. S., Marques, M., Teles, L. K., & Ferreira, L. G. (2019). DFT-½ method on 2D materials: an approximate quasiparticle correction for the calculation of fundamental energy gap. In Abstracts. São Paulo: Sociedade Brasileira de Física - SBF. -
NLM
Guilhon I, Koda DS, Marques M, Teles LK, Ferreira LG. DFT-½ method on 2D materials: an approximate quasiparticle correction for the calculation of fundamental energy gap. Abstracts. 2019 ;[citado 2026 mar. 12 ] -
Vancouver
Guilhon I, Koda DS, Marques M, Teles LK, Ferreira LG. DFT-½ method on 2D materials: an approximate quasiparticle correction for the calculation of fundamental energy gap. Abstracts. 2019 ;[citado 2026 mar. 12 ] - Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization
- Calculated band gaps and band offsets at the `SiO IND.2´/Si interface with the inclusion of the self-energy of electrons and holes
- Combination of statistical model and quasiparticle approximation to study 'MG''ZN'O' and 'CD''ZN''O' alloys
- New and surprising results of the LDA-1/2 method
- Arsenide, nitride and phosphide semiconductors heterojunctions band alignments calculated for large supercells using local density approximation with self-energy corrections
- Ground state structures of intermettallic compounds: a first-principles ising model
- Structural, electronic and magnetic properties of cubic AlN:Mn and AlN:Cr
- Theoretical study `GaAs IND.1-X´`Bi IND.X´ semiconductor alloy
- Recent Progress on LDA-1/2 method for gap correction
- Ordering in semiconductor alloys
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas