Elemental thin film depth profiles by using self-consistent ion beam analysis – MultiSIMNRA: a new computational tool (2016)
- Authors:
- USP affiliated authors: RODRIGUES, CLEBER LIMA - IF ; SILVA, TIAGO FIORINI DA - IF ; ADDED, NEMITALA - IF ; RIZZUTTO, MARCIA DE ALMEIDA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; INSTRUMENTAÇÃO (FÍSICA); ANÁLISE DE DADOS; SOFTWARES; DETETORES; FEIXES; ESPALHAMENTO
- Keywords: MultiSIMNRA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Posters - Resumo
- Conference titles: Encontro de Física
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ABNT
RODRIGUES, Cleber Lima et al. Elemental thin film depth profiles by using self-consistent ion beam analysis – MultiSIMNRA: a new computational tool. 2016, Anais.. São Paulo: SBF, 2016. Disponível em: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1935-1.pdf. Acesso em: 19 set. 2024. -
APA
Rodrigues, C. L., Rizzutto, M. de A., Silva, T. F. da, Mayer, B. M., Added, N., Rizzutto, M. de A., & Tabacniks, M. H. (2016). Elemental thin film depth profiles by using self-consistent ion beam analysis – MultiSIMNRA: a new computational tool. In Posters - Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1935-1.pdf -
NLM
Rodrigues CL, Rizzutto M de A, Silva TF da, Mayer BM, Added N, Rizzutto M de A, Tabacniks MH. Elemental thin film depth profiles by using self-consistent ion beam analysis – MultiSIMNRA: a new computational tool [Internet]. Posters - Resumo. 2016 ;[citado 2024 set. 19 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1935-1.pdf -
Vancouver
Rodrigues CL, Rizzutto M de A, Silva TF da, Mayer BM, Added N, Rizzutto M de A, Tabacniks MH. Elemental thin film depth profiles by using self-consistent ion beam analysis – MultiSIMNRA: a new computational tool [Internet]. Posters - Resumo. 2016 ;[citado 2024 set. 19 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1935-1.pdf - Study of sputtering processes, on metallic thin films, due to low energy ion implantation
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