Journal of Semiconductors (2012)
- Authors:
- Autor USP: GUOQIANG, HAI - IFSC
- Unidade: IFSC
- Assunto: ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Publisher: Institute of Physics - IOP
- Publisher place: Bristol
- Date published: 2012
- Source:
- ISSN: 1674-4926
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ABNT
Journal of Semiconductors. . Bristol: Institute of Physics - IOP. . Acesso em: 09 out. 2024. , 2012 -
APA
Journal of Semiconductors. (2012). Journal of Semiconductors. Bristol: Institute of Physics - IOP. -
NLM
Journal of Semiconductors. 2012 ;[citado 2024 out. 09 ] -
Vancouver
Journal of Semiconductors. 2012 ;[citado 2024 out. 09 ] - Fixed-node diffusion Monte Carlo simulation of small ionized carbon clusters
- Optically detected magnetophonon resonances in GaAs
- Low temperature electron mobility in parabolic quantum wells
- Channel magnetotransport of surface electrons on superfluid helium
- Raman spectra of a two-dimensional electron gas in narrow-gap semiconductor quantum wells in magnetic fields: spin-flip and anisotropic effects
- Fast electron relaxation in coupled quantum wells and quantum wires
- Collective excitations and electron-electron interaction in multisubband quantum wires
- Channel magnetotransport of surface electrons on superfluid helium
- Multiband electron resonant Raman scattering in quantum wells in a magnetic field
- Electron-acoustic-phonon scattering and electron relaxation in two-coupled quantum rings
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