Journal of Semiconductors (2012)
- Autores:
- Autor USP: GUOQIANG, HAI - IFSC
- Unidade: IFSC
- Assunto: ENGENHARIA ELÉTRICA
- Idioma: Inglês
- Imprenta:
- Editora: Institute of Physics - IOP
- Local: Bristol
- Data de publicação: 2012
- Fonte:
- ISSN: 1674-4926
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ABNT
Journal of Semiconductors. . Bristol: Institute of Physics - IOP. . Acesso em: 28 mar. 2024. , 2012 -
APA
Journal of Semiconductors. (2012). Journal of Semiconductors. Bristol: Institute of Physics - IOP. -
NLM
Journal of Semiconductors. 2012 ;[citado 2024 mar. 28 ] -
Vancouver
Journal of Semiconductors. 2012 ;[citado 2024 mar. 28 ] - Optically detected magnetophonons resonance in polar semiconductors
- High energy transitions of shallow magneto-donors in multiple quantum wells and electron-phonon coupling effects
- High energy transitions and phonon-assited harmonics of a shallow magneto-donor in a GaAs/AlGaAs multiple quantum wells
- Electron relaxation due to collective and single-particle excitations in multisubband quantum wires
- Zeeman effect and magnetic field induced spin-hybridization in semiconductor quantum dots
- Interação elétron-fônon: um estudo da densidade de estados em um ponto quântico usando o método da função de green
- Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells
- Driven quasi-1D Wigner crystal in the presence of a constriction
- Energy states of phosphorous donor in silicon in fields up to 18 T
- Electron and hole states and optical properties of artificial quantum ring atoms and molecules
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