The metal-induced crystallization of amorphous Si and Ge thin films: fundamentals and advancements (2012)
- Autor:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: SILÍCIO; GERMÂNIO; FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física - SBF
- Publisher place: São Paulo
- Date published: 2012
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
ZANATTA, Antonio Ricardo. The metal-induced crystallization of amorphous Si and Ge thin films: fundamentals and advancements. 2012, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2012. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxv/sys/resumos/R0811-1.pdf. Acesso em: 19 abr. 2024. -
APA
Zanatta, A. R. (2012). The metal-induced crystallization of amorphous Si and Ge thin films: fundamentals and advancements. In Resumos. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxv/sys/resumos/R0811-1.pdf -
NLM
Zanatta AR. The metal-induced crystallization of amorphous Si and Ge thin films: fundamentals and advancements [Internet]. Resumos. 2012 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxv/sys/resumos/R0811-1.pdf -
Vancouver
Zanatta AR. The metal-induced crystallization of amorphous Si and Ge thin films: fundamentals and advancements [Internet]. Resumos. 2012 ;[citado 2024 abr. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxv/sys/resumos/R0811-1.pdf - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas