Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach (2011)
- Authors:
- Autor USP: FERREIRA, LUIZ GUIMARAES - IF
- Unidade: IF
- DOI: 10.1063/1.3576570
- Assunto: ALTA TEMPERATURA
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied physics letters
- Volume/Número/Paginação/Ano: v.98, n.15, p. 151907, abr.2011
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
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ABNT
PELÁ, R R et al. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach. Applied physics letters, v. 98, n. 15, p. 151907, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3576570. Acesso em: 11 fev. 2026. -
APA
Pelá, R. R., Ferreira, L. G., Caetano, C., Marques, M., Furthmüller, J., & Teles, L. K. (2011). Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach. Applied physics letters, 98( 15), 151907. doi:10.1063/1.3576570 -
NLM
Pelá RR, Ferreira LG, Caetano C, Marques M, Furthmüller J, Teles LK. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach [Internet]. Applied physics letters. 2011 ;98( 15): 151907.[citado 2026 fev. 11 ] Available from: https://doi.org/10.1063/1.3576570 -
Vancouver
Pelá RR, Ferreira LG, Caetano C, Marques M, Furthmüller J, Teles LK. Accurate band gaps of 'AL''GA'N, 'IN''GA'N, and 'AL''IN'N alloys calculations based on LDA-1/2 approach [Internet]. Applied physics letters. 2011 ;98( 15): 151907.[citado 2026 fev. 11 ] Available from: https://doi.org/10.1063/1.3576570 - Disorder effects of codoped GaN based diluted magnetic semiconductors: antiferromagnetism with spin polarization
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Informações sobre o DOI: 10.1063/1.3576570 (Fonte: oaDOI API)
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