Ab initio calculations of the structural and electronic properties of O vacancy in 'Ti''O IND. 2' and 'SN''O IND. 2' (2011)
- Authors:
- Autor USP: ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Assunto: PARAMAGNETISMO
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
SOUSA, C O et al. Ab initio calculations of the structural and electronic properties of O vacancy in 'Ti''O IND. 2' and 'SN''O IND. 2'. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0034-4.pdf. Acesso em: 19 set. 2024. -
APA
Sousa, C. O., Alves, H. W. L., Borges, P. D., Assali, L. V. C., Scolfaro, L. M. R., & Silva Jr, E. F. da. (2011). Ab initio calculations of the structural and electronic properties of O vacancy in 'Ti''O IND. 2' and 'SN''O IND. 2'. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0034-4.pdf -
NLM
Sousa CO, Alves HWL, Borges PD, Assali LVC, Scolfaro LMR, Silva Jr EF da. Ab initio calculations of the structural and electronic properties of O vacancy in 'Ti''O IND. 2' and 'SN''O IND. 2' [Internet]. Resumo. 2011 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0034-4.pdf -
Vancouver
Sousa CO, Alves HWL, Borges PD, Assali LVC, Scolfaro LMR, Silva Jr EF da. Ab initio calculations of the structural and electronic properties of O vacancy in 'Ti''O IND. 2' and 'SN''O IND. 2' [Internet]. Resumo. 2011 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0034-4.pdf - Electronic structure of erbium centers in silicon
- Propriedades físicas de impurezas profundas em silício
- Electrically active centers in partial dislocations in semiconductors
- Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
- Structural and electronic properties of hydrogen impurities in MgO
- A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond
- Complex centers of hydrogen in tin dioxide
- General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond
- Estados eletronicos de complexos envolvendo cobre e litio em germanio
- Calculos da estrutura eletronica de defeitos complexos em 'GA''AS' e em outros cristais semicondutores com carater ionico
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas