Delocalization-localization transition of plasmons in disordered superlattices (2010)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; ESPECTROSCOPIA RAMAN; PROPRIEDADES DOS MATERIAIS; ONDAS ELETROMAGNÉTICAS
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors
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ABNT
PUSEP, Yuri A e RODRIGUES, A. D. e SOKOLOV, S. S. Delocalization-localization transition of plasmons in disordered superlattices. 2010, Anais.. Daejeon: ICPS, 2010. . Acesso em: 04 nov. 2024. -
APA
Pusep, Y. A., Rodrigues, A. D., & Sokolov, S. S. (2010). Delocalization-localization transition of plasmons in disordered superlattices. In Abstracts. Daejeon: ICPS. -
NLM
Pusep YA, Rodrigues AD, Sokolov SS. Delocalization-localization transition of plasmons in disordered superlattices. Abstracts. 2010 ;[citado 2024 nov. 04 ] -
Vancouver
Pusep YA, Rodrigues AD, Sokolov SS. Delocalization-localization transition of plasmons in disordered superlattices. Abstracts. 2010 ;[citado 2024 nov. 04 ] - Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
- The Scientific World Journal: Condensed Matter Physics
- The Scientific World Journal: condensed matter physics
- Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
- Coherence of elementary excitations in disordered electron systems
- Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
- The Scientific World Journal: condensed matter physics
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