Lead iodide thin films grown using N.N-Dimethylformamide as solvent (2007)
- Authors:
- Autor USP: MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- Assunto: ELETROQUÍMICA
- Language: Inglês
- Imprenta:
- Publisher place: San Fancisco
- Date published: 2007
- Source:
- Título: Materials Research Society Symposium Proceedings
- ISSN: 0272-9172
- Volume/Número/Paginação/Ano: v. 994, p. 0994-F03-05, 2007
- Conference titles: Materials Research Society Spring Meeting
-
ABNT
CONDELES, Jose Fernando e CALDEIRA-FILHO, Ademar Marques e MULATO, Marcelo. Lead iodide thin films grown using N.N-Dimethylformamide as solvent. Materials Research Society Symposium Proceedings. San Fancisco: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo. . Acesso em: 02 out. 2024. , 2007 -
APA
Condeles, J. F., Caldeira-Filho, A. M., & Mulato, M. (2007). Lead iodide thin films grown using N.N-Dimethylformamide as solvent. Materials Research Society Symposium Proceedings. San Fancisco: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo. -
NLM
Condeles JF, Caldeira-Filho AM, Mulato M. Lead iodide thin films grown using N.N-Dimethylformamide as solvent. Materials Research Society Symposium Proceedings. 2007 ; 994 0994-F03-05.[citado 2024 out. 02 ] -
Vancouver
Condeles JF, Caldeira-Filho AM, Mulato M. Lead iodide thin films grown using N.N-Dimethylformamide as solvent. Materials Research Society Symposium Proceedings. 2007 ; 994 0994-F03-05.[citado 2024 out. 02 ] - Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method
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