Study of heterojunction diodes using POMA/PANI and amorphous silicon structures (2000)
- Authors:
- USP affiliated authors: DIRANI, ELY ANTONIO TADEU - EP ; ONMORI, ROBERTO KOJI - EP ; FARIA, ROBERTO MENDONCA - IFSC
- Unidades: EP; IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of abstracts
- Conference titles: International Conference on Science and Technology of Synthetic Metals
-
ABNT
DIRANI, Ely Antonio Tadeu; ONMORI, Roberto Koji; OLIVATI, C. A.; FARIA, Roberto Mendonça. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. Anais.. Amsterdam: Elsevier, 2000. -
APA
Dirani, E. A. T., Onmori, R. K., Olivati, C. A., & Faria, R. M. (2000). Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. In Book of abstracts. Amsterdam: Elsevier. -
NLM
Dirani EAT, Onmori RK, Olivati CA, Faria RM. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. Book of abstracts. 2000 ; -
Vancouver
Dirani EAT, Onmori RK, Olivati CA, Faria RM. Study of heterojunction diodes using POMA/PANI and amorphous silicon structures. Book of abstracts. 2000 ; - Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure
- Efeito fotovoltaico e fotocondutividade em dispositivos poliméricos
- Study of heterojunction diodes using POMA/PANI and amorphous/microcrystalline silicon structures
- Device model for polyaniline field-effect transistor
- An electrical study of a thin film poly(o-methoxyaniline) field effect transitor
- Device model for polyaniline field-effect transistor
- Devide model for POMA field-effect transistor
- Obtenção e caracterização de diodo usando a poli (o-metoxianilina)
- Processo de fabricação de um mosfet de poli (o-metoxianilina)
- Device model for poly(o-methoxyaniline) field-effect transistor
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
