'Delta''epsilon ind.gama''=''30''Ke' 'nu' ridge observed in the 'antpot. 120Sn' reaction (1997)
- Authors:
- Autor USP: MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- Assunto: FÍSICA NUCLEAR
- Language: Inglês
- Source:
- Título: Physical Review C
- Volume/Número/Paginação/Ano: v. 56, n. 1, p. 257-262, 1997
-
ABNT
LUNARDON, M et al. 'Delta''epsilon ind.gama''=''30''Ke' 'nu' ridge observed in the 'antpot. 120Sn' reaction. Physical Review C, v. 56, n. 1, p. 257-262, 1997Tradução . . Acesso em: 17 fev. 2026. -
APA
Lunardon, M., Medina, N. H., Viesti, G., Bazzacco, D., Fabris, D., Lunardi, S., et al. (1997). 'Delta''epsilon ind.gama''=''30''Ke' 'nu' ridge observed in the 'antpot. 120Sn' reaction. Physical Review C, 56( 1), 257-262. -
NLM
Lunardon M, Medina NH, Viesti G, Bazzacco D, Fabris D, Lunardi S, Nebbia G, Rossi Alvarez C, Angelis G de, Cinausero M, Acuna DD, Poli M de, Farnea E, Fioretto E, Prete G, Maron G, Napoli DR. 'Delta''epsilon ind.gama''=''30''Ke' 'nu' ridge observed in the 'antpot. 120Sn' reaction. Physical Review C. 1997 ; 56( 1): 257-262.[citado 2026 fev. 17 ] -
Vancouver
Lunardon M, Medina NH, Viesti G, Bazzacco D, Fabris D, Lunardi S, Nebbia G, Rossi Alvarez C, Angelis G de, Cinausero M, Acuna DD, Poli M de, Farnea E, Fioretto E, Prete G, Maron G, Napoli DR. 'Delta''epsilon ind.gama''=''30''Ke' 'nu' ridge observed in the 'antpot. 120Sn' reaction. Physical Review C. 1997 ; 56( 1): 257-262.[citado 2026 fev. 17 ] - New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects
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