Spin-dependent transport in amorphous silicon thin-film transistors (1996)
- Authors:
- Autor USP: GRAEFF, CARLOS FREDERICO DE OLIVEIRA - FFCLRP
- Unidade: FFCLRP
- DOI: 10.1016/0022-3093(96)00059-2
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Non-Crystalline Solids
- Volume/Número/Paginação/Ano: v.198-200, p.117-20, 1996
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
GRAEFF, C F O et al. Spin-dependent transport in amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids, v. 198-200, p. 117-20, 1996Tradução . . Disponível em: https://doi.org/10.1016/0022-3093(96)00059-2. Acesso em: 23 jan. 2026. -
APA
Graeff, C. F. O., Kawachi, G., Brandt, M. S., Stutzmann, M., & Powell, M. J. (1996). Spin-dependent transport in amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids, 198-200, 117-20. doi:10.1016/0022-3093(96)00059-2 -
NLM
Graeff CFO, Kawachi G, Brandt MS, Stutzmann M, Powell MJ. Spin-dependent transport in amorphous silicon thin-film transistors [Internet]. Journal of Non-Crystalline Solids. 1996 ;198-200 117-20.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/0022-3093(96)00059-2 -
Vancouver
Graeff CFO, Kawachi G, Brandt MS, Stutzmann M, Powell MJ. Spin-dependent transport in amorphous silicon thin-film transistors [Internet]. Journal of Non-Crystalline Solids. 1996 ;198-200 117-20.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/0022-3093(96)00059-2 - Local order in hydrogenated amorphous germanium thin films studies by extended x-ray absorption fine-structure spectroscopy
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Informações sobre o DOI: 10.1016/0022-3093(96)00059-2 (Fonte: oaDOI API)
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