Effect of ethanol concentrations on few layer Schottky graphene transistors (2013)
- Autores:
- Autores USP: ARAKI, KOITI - IQ ; TOMA, HENRIQUE EISI - IQ ; SANTOS, ANTONIO DOMINGUES DOS - IF ; VALLE, MARCIO DE ALMEIDA - EP ; SEABRA, ANTONIO CARLOS - EP ; PERES, HENRIQUE ESTANISLAU MALDONADO - EP
- Unidades: IQ; IF; EP
- DOI: 10.1088/1742-6596/421/1/012005
- Assuntos: NANOTECNOLOGIA; ETANOL
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Journal of Physics: Conference Series
- ISSN: 1742-6588
- Volume/Número/Paginação/Ano: v. 421, art. 012005 p. 1-5, 2013
- Nome do evento: Ibero-American Congress on Sensors (Ibersensor)
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/421/1/012005. Acesso em: 19 set. 2024. , 2013 -
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Fernandes, F. J. R., Valle, M. de A., et al. (2013). Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. doi:10.1088/1742-6596/421/1/012005 -
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 set. 19 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005 -
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 set. 19 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005 - Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations
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Informações sobre o DOI: 10.1088/1742-6596/421/1/012005 (Fonte: oaDOI API)
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