Microscopic structure of the 90 'GRAUS' and 30'GRAUS' partial dislocations in gallium arsenide (2002)
- Autores:
- Autores USP: JUSTO FILHO, JOAO FRANCISCO - EP ; ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidades: EP; IF
- Assuntos: SEMICONDUTORES; MICROSCOPIA (ESTRUTURA)
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 14, n. 49, p. 12649-12754, 2002
-
ABNT
JUSTO FILHO, João Francisco e NUNES, R W e ASSALI, L. V. C. Microscopic structure of the 90 'GRAUS' and 30'GRAUS' partial dislocations in gallium arsenide. Journal of Physics: Condensed Matter, v. 14, n. 49, p. 12649-12754, 2002Tradução . . Disponível em: http://ej.iop.org/links/05/8fwEpTinU74o5Mv4YtsCDQ/c24812.pdf. Acesso em: 19 set. 2024. -
APA
Justo Filho, J. F., Nunes, R. W., & Assali, L. V. C. (2002). Microscopic structure of the 90 'GRAUS' and 30'GRAUS' partial dislocations in gallium arsenide. Journal of Physics: Condensed Matter, 14( 49), 12649-12754. Recuperado de http://ej.iop.org/links/05/8fwEpTinU74o5Mv4YtsCDQ/c24812.pdf -
NLM
Justo Filho JF, Nunes RW, Assali LVC. Microscopic structure of the 90 'GRAUS' and 30'GRAUS' partial dislocations in gallium arsenide [Internet]. Journal of Physics: Condensed Matter. 2002 ; 14( 49): 12649-12754.[citado 2024 set. 19 ] Available from: http://ej.iop.org/links/05/8fwEpTinU74o5Mv4YtsCDQ/c24812.pdf -
Vancouver
Justo Filho JF, Nunes RW, Assali LVC. Microscopic structure of the 90 'GRAUS' and 30'GRAUS' partial dislocations in gallium arsenide [Internet]. Journal of Physics: Condensed Matter. 2002 ; 14( 49): 12649-12754.[citado 2024 set. 19 ] Available from: http://ej.iop.org/links/05/8fwEpTinU74o5Mv4YtsCDQ/c24812.pdf - Structure and bonding of iron-acceptor pairs in silicon
- Electronic structure of erbium centers in silicon
- Propriedades físicas de impurezas profundas em silício
- Electrically active centers in partial dislocations in semiconductors
- Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
- Structural and electronic properties of hydrogen impurities in MgO
- A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond
- Complex centers of hydrogen in tin dioxide
- General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond
- Estados eletronicos de complexos envolvendo cobre e litio em germanio
Como citar
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas