Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire (1989)
- Autores:
- Autores USP: HIPOLITO, OSCAR - IFSC ; DEGANI, MARCOS HENRIQUE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Superlatices and Microstructure
- Volume/Número/Paginação/Ano: v.5 , n.2 , p.137-9, 1989
-
ABNT
DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire. Superlatices and Microstructure, v. 5 , n. 2 , p. 137-9, 1989Tradução . . Acesso em: 18 set. 2024. -
APA
Degani, M. H., & Hipólito, O. (1989). Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire. Superlatices and Microstructure, 5 ( 2 ), 137-9. -
NLM
Degani MH, Hipólito O. Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire. Superlatices and Microstructure. 1989 ;5 ( 2 ): 137-9.[citado 2024 set. 18 ] -
Vancouver
Degani MH, Hipólito O. Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire. Superlatices and Microstructure. 1989 ;5 ( 2 ): 137-9.[citado 2024 set. 18 ] - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Exchange and correlations effects in a semiconductor quantum-well wire
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- IR emission by charge oscilattion in semiconductor heterostructures
- Electron-phonon interaction effects in a quasi-two-dimensional electron 'GAS' in the 'GA''AS'-'GA IND. 1-X' 'A1 IND. X' 'AS' heterostructure
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