ReP USP - Resultado da busca

Parte de monografia/livro
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs (2003)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Pavanello, Marcelo Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., & Pavanello, M. A. (2003). Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Analysis of the capacitance vs. voltage in graded channel SOI capacitor (2003)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2003). Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs (2003)
Almeida, Galba Falce de; Nicolett, Aparecido Sirley; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ALMEIDA, Galba Falce de e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Almeida, G. F. de, Nicolett, A. S., & Martino, J. A. (2003). Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer (2003)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2003). Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Low operating voltage of an ITO/MEH-PPV/AI light emmiting device (2003)
Neves, José Antônio Rocha das; Andrade, Adnei Melges de ; Dirani, Ely Antonio Tadeu ; Santos, Emerson Roberto ; Fonseca, Fernando Josepetti
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NEVES, José Antônio Rocha das et al. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Neves, J. A. R. das, Andrade, A. M. de, Dirani, E. A. T., Santos, E. R., & Fonseca, F. J. (2003). Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Neves JAR das, Andrade AM de, Dirani EAT, Santos ER, Fonseca FJ. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Neves JAR das, Andrade AM de, Dirani EAT, Santos ER, Fonseca FJ. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Analysis on GC SOI MOSFET analog parameters at high temperatures (2003)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Analysis on GC SOI MOSFET analog parameters at high temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2003). Analysis on GC SOI MOSFET analog parameters at high temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Simulations of silicon microstructure for preconcentration of metallic ions (2003)
Silva, José Alberto Fracassi da; Furlan, Rogério ; Simões, Eliphas Wagner; Silva, Maria Lucia Pereira da; Pereira, Marcos Tadeu
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, José Alberto Fracassi da et al. Simulations of silicon microstructure for preconcentration of metallic ions. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . Disponível em: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf. Acesso em: 16 nov. 2025.
APA
Silva, J. A. F. da, Furlan, R., Simões, E. W., Silva, M. L. P. da, & Pereira, M. T. (2003). Simulations of silicon microstructure for preconcentration of metallic ions. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. Recuperado de https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
NLM
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Vancouver
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Parte de monografia/livro
Influence of RF frequency on production of adsorbent organic films by PECVD (2003)
Nascimento Filho, Antonio Pereira do; Hamanaka, Cristian Otsuka; Jesus, Dosil Pereira de; Silva, Maria Lucia Pereira da; Demarquette, Nicole Raymonde
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NASCIMENTO FILHO, Antonio Pereira do et al. Influence of RF frequency on production of adsorbent organic films by PECVD. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . Disponível em: https://repositorio.usp.br/directbitstream/1a91733e-6df9-42ae-8d53-c8ca7c43befe/DEMARQUETTE-2003-Influence_of_RF_frequency.pdf. Acesso em: 16 nov. 2025.
APA
Nascimento Filho, A. P. do, Hamanaka, C. O., Jesus, D. P. de, Silva, M. L. P. da, & Demarquette, N. R. (2003). Influence of RF frequency on production of adsorbent organic films by PECVD. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. Recuperado de https://repositorio.usp.br/directbitstream/1a91733e-6df9-42ae-8d53-c8ca7c43befe/DEMARQUETTE-2003-Influence_of_RF_frequency.pdf
NLM
Nascimento Filho AP do, Hamanaka CO, Jesus DP de, Silva MLP da, Demarquette NR. Influence of RF frequency on production of adsorbent organic films by PECVD [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/1a91733e-6df9-42ae-8d53-c8ca7c43befe/DEMARQUETTE-2003-Influence_of_RF_frequency.pdf
Vancouver
Nascimento Filho AP do, Hamanaka CO, Jesus DP de, Silva MLP da, Demarquette NR. Influence of RF frequency on production of adsorbent organic films by PECVD [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ] Available from: https://repositorio.usp.br/directbitstream/1a91733e-6df9-42ae-8d53-c8ca7c43befe/DEMARQUETTE-2003-Influence_of_RF_frequency.pdf
Parte de monografia/livro
Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas (2003)
Reyes Betanzo, C; Moshkalyov, Stanislav A; Seabra, Antonio Carlos ; Swart, Jacobus Willibrordus
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REYES BETANZO, C et al. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Reyes Betanzo, C., Moshkalyov, S. A., Seabra, A. C., & Swart, J. W. (2003). Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Reyes Betanzo C, Moshkalyov SA, Seabra AC, Swart JW. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Reyes Betanzo C, Moshkalyov SA, Seabra AC, Swart JW. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
An improved current model for edgeless SOI MOSFETs (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved current model for edgeless SOI MOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Giacomini, R. C., & Martino, J. A. (2003). An improved current model for edgeless SOI MOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films (2003)
Oliveira, Alessandro Ricardo de; Paez Carreño, Marcelo Nelson
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2003). In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles (2003)
Silva, Ana Neilde Rodrigues da; Furlan, Rogério ; Ramos, I.; Silva, Maria Lucia Pereira da; Fachini, E.; Santiago-Avilés, Jorge Juan
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, BLENDAS
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ABNT
SILVA, Ana Neilde Rodrigues da et al. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Silva, A. N. R. da, Furlan, R., Ramos, I., Silva, M. L. P. da, Fachini, E., & Santiago-Avilés, J. J. (2003). Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Photoconductivity of semi-insulating polysilicon (2003)
Lantin, Daniela Garrote; Onoda, Edyr; Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
LANTIN, Daniela Garrote et al. Photoconductivity of semi-insulating polysilicon. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Lantin, D. G., Onoda, E., Zambom, L. da S., & Mansano, R. D. (2003). Photoconductivity of semi-insulating polysilicon. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Electrochemical process for silicon tips fabrication (2003)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2003, São Paulo /. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva et al. Electrochemical process for silicon tips fabrication. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2003). Electrochemical process for silicon tips fabrication. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Electrochemical process for silicon tips fabrication. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Electrochemical process for silicon tips fabrication. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Integrated thermopiles for infrared sensing (2003)
Mendes, Wanderson Rodrigues; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MENDES, Wanderson Rodrigues e PERES, Henrique Estanislau Maldonado e RAMÍREZ FERNANDEZ, Francisco Javier. Integrated thermopiles for infrared sensing. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Mendes, W. R., Peres, H. E. M., & Ramírez Fernandez, F. J. (2003). Integrated thermopiles for infrared sensing. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Mendes WR, Peres HEM, Ramírez Fernandez FJ. Integrated thermopiles for infrared sensing. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Mendes WR, Peres HEM, Ramírez Fernandez FJ. Integrated thermopiles for infrared sensing. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Silicon carbide clusters in silicon formed by carbon ions implantation (2003)
Escobar Forhan, Neisy Amparo; Pereyra, Inés
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ESCOBAR FORHAN, Neisy Amparo e PEREYRA, Inés. Silicon carbide clusters in silicon formed by carbon ions implantation. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Escobar Forhan, N. A., & Pereyra, I. (2003). Silicon carbide clusters in silicon formed by carbon ions implantation. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Self-sustained bridges of a-SiC:H obtained by PECVD technique (2003)
Paez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAEZ CARREÑO, Marcelo Nelson e LOPES, Alexandre Tavares. Self-sustained bridges of a-SiC:H obtained by PECVD technique. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Paez Carreño, M. N., & Lopes, A. T. (2003). Self-sustained bridges of a-SiC:H obtained by PECVD technique. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2003)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Mercha, A.; Claeys, Cor ; De Meyer, K
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Mercha, A., Claeys, C., & De Meyer, K. (2003). A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, De Meyer K. A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C (2003)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2003). Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C (2003)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2003). The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

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