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Artigo de periodico
Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge (2025)
Aguiar, Vitor A. P. ; Medina, Nilberto Heder ; Added, Nemitala ; Alberton, Saulo ; Macchione, Eduardo L. A. ; Guazzelli, Marcilei A ; Melo, Marco A. A.; Oliveira, Juliano A.; Giacomini, Renato C. ; Aguirre, Fernando R.; Allegro, Paula Rangel Pestana ; Zaggato, Hellen C. S. ; Sayeg, Isaac Jamil
Source: IEEE Transactions on Electron Devices. Unidades: IF, IGC, EP
Subjects: RADIAÇÃO IONIZANTE, ÍONS
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ABNT
AGUIAR, Vitor A. P. et al. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge. IEEE Transactions on Electron Devices, p. 31 - 36, 2025Tradução . . Disponível em: https://doi.org/10.1109/TED.2024.3497927. Acesso em: 09 nov. 2025.
APA
Aguiar, V. A. P., Medina, N. H., Added, N., Alberton, S., Macchione, E. L. A., Guazzelli, M. A., et al. (2025). Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge. IEEE Transactions on Electron Devices, 31 - 36. doi:10.1109/TED.2024.3497927
NLM
Aguiar VAP, Medina NH, Added N, Alberton S, Macchione ELA, Guazzelli MA, Melo MAA, Oliveira JA, Giacomini RC, Aguirre FR, Allegro PRP, Zaggato HCS, Sayeg IJ. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge [Internet]. IEEE Transactions on Electron Devices. 2025 ; 31 - 36.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/TED.2024.3497927
Vancouver
Aguiar VAP, Medina NH, Added N, Alberton S, Macchione ELA, Guazzelli MA, Melo MAA, Oliveira JA, Giacomini RC, Aguirre FR, Allegro PRP, Zaggato HCS, Sayeg IJ. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge [Internet]. IEEE Transactions on Electron Devices. 2025 ; 31 - 36.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/TED.2024.3497927
Artigo de periodico
Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge (2024)
Aguiar, Vitor A. P. ; Medina, Nilberto Heder ; Added, Nemitala ; Alberton, Saulo G ; Macchione, Eduardo L. A. ; Guazzelli, Marcilei A ; Melo, Marco A A; Oliveira, Juliano A; Giacomini, Renato C. ; Aguirre, Fernando R; Allegro, Paula Rangel Pestana ; Zaggato, Hellen C. S. ; Sayeg, Isaac Jamil
Source: IEEE Transactions on Electron Devices. Unidades: IF, IGC, EP
Subjects: ÍONS PESADOS, FEIXES, RADIAÇÃO IONIZANTE
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ABNT
AGUIAR, Vitor A. P. et al. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge. IEEE Transactions on Electron Devices, 2024Tradução . . Disponível em: https://doi.org/10.1109/TED.2024.3497927. Acesso em: 09 nov. 2025.
APA
Aguiar, V. A. P., Medina, N. H., Added, N., Alberton, S. G., Macchione, E. L. A., Guazzelli, M. A., et al. (2024). Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge. IEEE Transactions on Electron Devices. doi:10.1109/TED.2024.3497927
NLM
Aguiar VAP, Medina NH, Added N, Alberton SG, Macchione ELA, Guazzelli MA, Melo MAA, Oliveira JA, Giacomini RC, Aguirre FR, Allegro PRP, Zaggato HCS, Sayeg IJ. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge [Internet]. IEEE Transactions on Electron Devices. 2024 ;[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/TED.2024.3497927
Vancouver
Aguiar VAP, Medina NH, Added N, Alberton SG, Macchione ELA, Guazzelli MA, Melo MAA, Oliveira JA, Giacomini RC, Aguirre FR, Allegro PRP, Zaggato HCS, Sayeg IJ. Evaluation of Funnel Models on Calculation of Ion-Induced Collected Charge [Internet]. IEEE Transactions on Electron Devices. 2024 ;[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/TED.2024.3497927
Artigo de periodico
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
Bordallo, Caio Cesar Mendes ; Collaert, Nadine ; Claeys, Cor ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SEMICONDUTORES
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ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 09 nov. 2025.
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Artigo de periodico
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes (2016)
Oliveira, Alberto Vinicius de; Simoen, Eddy ; Mitard Jerome; Agopian, Paula Ghedini Der ; Langer, Robert; Witters, Liesbeth J; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO
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ABNT
OLIVEIRA, Alberto Vinicius de et al. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, v. 63, n. 10, p. 4031-4037, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2598288. Acesso em: 09 nov. 2025.
APA
Oliveira, A. V. de, Simoen, E., Mitard Jerome,, Agopian, P. G. D., Langer, R., Witters, L. J., & Martino, J. A. (2016). Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, 63( 10), 4031-4037. doi:10.1109/ted.2016.2598288
NLM
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Vancouver
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Artigo de periodico
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)
Neves, Felipe S; Agopian, Paula Ghedini Der ; Cretu, B; Rooyackers, Rita; Vandooren, A; Simoen, Eddy ; Thean, Aaron; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 09 nov. 2025.
APA
Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360
NLM
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Vancouver
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Artigo de periodico
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016)
Bordallo, Caio Cesar Mendes ; Claeys, Cor ; Thean, Aaron; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Agopian, Paula Ghedini Der ; Sivieri, Victor de Bodt; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: TRANSISTORES, SILÍCIO
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ABNT
BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 09 nov. 2025.
APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580
NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Artigo de periodico
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Santos, Sara Dereste dos; Rooyackers, Rita; Vandoren, A
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, TRANSISTORES, SILÍCIO
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ABNT
AGOPIAN, Paula Ghedini Der et al. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, v. 62, n. Ja 2015, p. 16-22, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2014.2367659. Acesso em: 09 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Santos, S. D. dos, Rooyackers, R., & Vandoren, A. (2015). Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, 62( Ja 2015), 16-22. doi:10.1109/ted.2014.2367659
NLM
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Vancouver
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Artigo de periodico
TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs (2015)
Bühler, Rudolf Theoderich; Vincent, Benjamin; Witters, Liesbeth J; Favia, Paola; Eneman, Geert; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: NANOTECNOLOGIA
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ABNT
BÜHLER, Rudolf Theoderich et al. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs. IEEE Transactions on Electron Devices, v. 62, n. 4, p. 1079-1084, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2015.2397441. Acesso em: 09 nov. 2025.
APA
Bühler, R. T., Vincent, B., Witters, L. J., Favia, P., Eneman, G., & Martino, J. A. (2015). TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs. IEEE Transactions on Electron Devices, 62( 4), 1079-1084. doi:10.1109/ted.2015.2397441
NLM
Bühler RT, Vincent B, Witters LJ, Favia P, Eneman G, Martino JA. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( 4): 1079-1084.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2015.2397441
Vancouver
Bühler RT, Vincent B, Witters LJ, Favia P, Eneman G, Martino JA. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( 4): 1079-1084.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2015.2397441
Artigo de periodico
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013)
Santos, Sara Dereste dos; Nicoletti, Talitha; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS, AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
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ABNT
SANTOS, Sara Dereste dos et al. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, v. 60, n. 1, p. 444-450, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2012.2227749. Acesso em: 09 nov. 2025.
APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Aoulaiche, M., Veloso, A., Jurczak, M., et al. (2013). On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, 60( 1), 444-450. doi:10.1109/ted.2012.2227749
NLM
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Vancouver
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Artigo de periodico
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature (2013)
Agopian, Paula Ghedini Der ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
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ABNT
AGOPIAN, Paula Ghedini Der et al. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, p. 2493-2497, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2013.2267614. Acesso em: 09 nov. 2025.
APA
Agopian, P. G. D., Simoen, E., Vandooren, A., Rooyackers, R., & Martino, J. A. (2013). Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature. IEEE Transactions on Electron Devices, 60( 8), 2493-2497. doi:10.1109/ted.2013.2267614
NLM
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Martino JA. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 8): 2493-2497.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2013.2267614
Vancouver
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Martino JA. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 8): 2493-2497.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2013.2267614
Artigo de periodico
Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices (2005)
Pereira, Regiane Aparecida Ragi; Romero, Murilo Araujo ; Nabet, Bahram
Source: IEEE Transactions on Electron Devices. Unidade: EESC
Assunto: SEMICONDUTORES
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ABNT
PEREIRA, Regiane Aparecida Ragi e ROMERO, Murilo Araujo e NABET, Bahram. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, v. 52, n. 2, p. 170-175, 2005Tradução . . Disponível em: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B. Acesso em: 09 nov. 2025.
APA
Pereira, R. A. R., Romero, M. A., & Nabet, B. (2005). Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, 52( 2), 170-175. Recuperado de http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
NLM
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 09 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
Vancouver
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 09 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
Artigo de periodico
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor (2005)
Cerdeira, Antonio ; Alemán, Miguel A.; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis ; Vancaillie, Laurent
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
CERDEIRA, Antonio et al. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor. IEEE Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005Tradução . . Disponível em: https://doi.org/10.1109/ted.2005.846327. Acesso em: 09 nov. 2025.
APA
Cerdeira, A., Alemán, M. A., Pavanello, M. A., Martino, J. A., Flandre, D., & Vancaillie, L. (2005). Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor. IEEE Transactions on Electron Devices, 52( 5), 967-972. doi:10.1109/ted.2005.846327
NLM
Cerdeira A, Alemán MA, Pavanello MA, Martino JA, Flandre D, Vancaillie L. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor [Internet]. IEEE Transactions on Electron Devices. 2005 ;52( 5): 967-972.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2005.846327
Vancouver
Cerdeira A, Alemán MA, Pavanello MA, Martino JA, Flandre D, Vancaillie L. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor [Internet]. IEEE Transactions on Electron Devices. 2005 ;52( 5): 967-972.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1109/ted.2005.846327

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