InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature - Alian, A; Agopian, Paula Ghedini Der; Verhulist, A.; Verreck, D.; Bordallo, Caio Cesar Mendes; Martino, João Antonio; Alian1, Y. Mols1, C. C. M. Bordallo2, D. Verreck3, A. Verhulst1, A. Vandooren1, R. Rooyackers1, P. G. D. Agopian2,4, J. A. Martino2, A. Thean1,a), D. Lin1, D. Mocuta1, and N. Collaert1 (Applied Physics Letters, 2016)