@inproceedings{inproceedingsab78e21e,
title   = {Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET},
author = {Carvalho, Henrique Lanfredi and Rangel, Ricardo Cardoso and Sasaki, Kátia Regina Akemi and Agopian, Paula Ghedini Der and Yojo, Leonardo Shimizu and Martino, João Antonio},
year = {2022},
doi = {10.1109/SBMICRO55822.2022.9880960},
publisher = {IEEE},
booktitle   = {Symposium on Microelectronics Technology}
}