@article{article332b42f6,
title   = {Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C},
author = {Sousa, Julia Cristina Soares and Perina, Welder F and Rangel, Roberto and Simoen, Eddy and Veloso, Anabela and Martino, João Antonio and Agopian, Paula Ghedini Der},
year = {2022},
doi = {10.1016/j.sse.2022.108238},
journal   = {Solid State Electronics}
}