@article{articleaa1fc6a4,
title   = {Ionizing radiation hardness tests of GaN HEMTs for harsh environments},
author = {Vilas Bôas, Alexis C. and Melo, M.A.A. de and Santos, R. B. B. and Giacomini, R. and Medina, Nilberto Heder and Seixas, L. E. and Finco, S. and Palomo, F. R. and Romero-Maestre, A. and Guazzelli, Marcilei A.},
year = {2021},
doi = {10.1016/j.microrel.2020.114000},
journal   = {Microelectronics Reliability}
}