@article{article3cd05900,
title   = {Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect},
author = {Nicolett, Aparecido Sirley and Martino, João Antonio and Simoen, Eddy and Claeys, Cor},
year = {2000},
doi = {10.1016/s0038-1101(99)00293-2},
journal   = {Solid-State Electronics}
}