@article{articlee550ceb0,
title   = {A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperatures},
author = {Pavanello, Marcelo Antonio and Martino, João Antonio},
year = {1998},
doi = {10.1051/jp4:1998311},
journal   = {Journal de Physique IV}
}