A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond (2017)
- Authors:
- Autor USP: ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Subjects: SPINTRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
-
ABNT
LUCATTO, Bruno et al. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1705.10644. Acesso em: 28 mar. 2023. , 2017 -
APA
Lucatto, B., Pela, R. R., Marques, M., Teles, L. K., & Assali, L. V. C. (2017). A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1705.10644 -
NLM
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2023 mar. 28 ] Available from: https://arxiv.org/abs/1705.10644 -
Vancouver
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2023 mar. 28 ] Available from: https://arxiv.org/abs/1705.10644 - Study of magnetic and electronic properties of 'SN' IND. 0,96''CR' IND. 0,04''O IND. 2' and 'SN' IND. 0,96''CR' IND. 0,04''O IND. 0,98''('V IND. O')IND. 0,02' diluted alloys
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