Low dimensional quantum structures grown by molecular beam epitaxy (1995)
- Autor:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assuntos: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Editora: Instituto Nacional de Pesquisas Espaciais - INPE
- Local: São José dos Campos
- Data de publicação: 1995
- Fonte:
- Título do periódico: Programa e Resumos
- Nome do evento: Encontro da Sociedade Brasileira de Crescimento de Cristais
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ABNT
BASMAJI, Pierre. Low dimensional quantum structures grown by molecular beam epitaxy. Anais.. São José dos Campos: Instituto Nacional de Pesquisas Espaciais - INPE, 1995. -
APA
Basmaji, P. (1995). Low dimensional quantum structures grown by molecular beam epitaxy. In Programa e Resumos. São José dos Campos: Instituto Nacional de Pesquisas Espaciais - INPE. -
NLM
Basmaji P. Low dimensional quantum structures grown by molecular beam epitaxy. Programa e Resumos. 1995 ; -
Vancouver
Basmaji P. Low dimensional quantum structures grown by molecular beam epitaxy. Programa e Resumos. 1995 ; - Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy
- Highlights and selected aspects of the development of molecular beam epitaxy: perspective and future directions
- Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic field -induced localization in a two-dimensional array of quantum dots
- Wire crystals 'GA''AS' and 'IN''AS' grown by mbe on porous silicon
- Diode based on the 2d electron gas in an artificial, strongly disordered potential
- Surface phonon and 'E IND.1' gap shift observe in 'IN''AS' wire crystals on porous 'SI'
- Charge transfer between percolation levels in a system with an artificial , strongly disordered potential
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