Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI' (1990)
- Autores:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Fonte:
- Título do periódico: Bulletin of the American Physical Society
- Volume/Número/Paginação/Ano: v.35, n.6 , p.1368, jun. 1990
- Nome do evento: March Meeting
-
ABNT
BASMAJI, Pierre e NAJDA, S P e PORTAL, J C. Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'. Bulletin of the American Physical Society. [S.l.]: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 27 jun. 2022. , 1990 -
APA
Basmaji, P., Najda, S. P., & Portal, J. C. (1990). Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'. Bulletin of the American Physical Society. Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Basmaji P, Najda SP, Portal JC. Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'. Bulletin of the American Physical Society. 1990 ;35( ju 1990): 1368.[citado 2022 jun. 27 ] -
Vancouver
Basmaji P, Najda SP, Portal JC. Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'. Bulletin of the American Physical Society. 1990 ;35( ju 1990): 1368.[citado 2022 jun. 27 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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