Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c (1990)
- Autores:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Editora: World Scientific
- Local: Singapore
- Data de publicação: 1990
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: Brazilian School of Semiconductor Physics
-
ABNT
BASMAJI, Pierre; GIBART, P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Anais.. Singapore: World Scientific, 1990. -
APA
Basmaji, P., & Gibart, P. (1990). Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. In Proceedings. Singapore: World Scientific. -
NLM
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ; -
Vancouver
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ; - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Negative magnetoresistance in coupled quantum wells
- Charge transfer between percolation levels in a system with an artificial , strongly disordered potential
Como citar
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
