Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications (2002)
Santos, R.E.; Doi, Ioshiaki; Diniz, J. A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos 
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, R.E. et al. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 16 nov. 2025.APA
Santos, R. E., Doi, I., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2002). Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]Vancouver
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 16 ]
