An improved current model for edgeless SOI MOSFETs (2003)
Giacomini, Renato Camargo; Martino, João Antonio 
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved current model for edgeless SOI MOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.APA
Giacomini, R. C., & Martino, J. A. (2003). An improved current model for edgeless SOI MOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]Vancouver
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
