Analysis on GC SOI MOSFET analog parameters at high temperatures (2003)
Galeti, Milene; Pavanello, Marcelo Antonio 
; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Analysis on GC SOI MOSFET analog parameters at high temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2003). Analysis on GC SOI MOSFET analog parameters at high temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]Vancouver
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
