Almeida, Galba Falce de; Nicolett, Aparecido Sirley; Martino, João Antonio 
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ALMEIDA, Galba Falce de e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.APA
Almeida, G. F. de, Nicolett, A. S., & Martino, J. A. (2003). Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]Vancouver
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
